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| Ordering number : ENA0525 SBR200-16JS SANYO Semiconductors DATA SHEET SBR200-16JS Applications * Schottky Barrier Diode (Twin Type * Cathode Common) 160V, 20A Rectifier High frequency rectification (switching regulators, converters, choppers). Features * * * * * * * Tj=150C. Low forward voltage (VF max=0.85V). Small reverse current (IR typ=10A). Short reverse recovery time. Low switching noise. High reliability due to planar structure. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, sine wave Tc=66C 50Hz sine wave, 1 cycle Conditions Ratings 160 165 20 120 --55 to +150 --55 to +150 Unit V V A A C C Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Thermal Resistance Symbol VR VF IR Rth(j-c) Conditions IR=3mA, Tj=25C* IF=10A, Tj=25C* VR=160V, Tj=25C* Junction-Case : Smoothed DC Ratings min 160 0.80 10 0.85 200 3.5 typ max Unit V V A C / W Note) * : Value per element Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1806SD SY IM TC-00000238 No. A0525-1/3 SBR200-16JS Package Dimensions unit : mm (typ) 7525-001 Anode 10.0 3.5 3.2 4.5 2.8 Electrical Connection Anode 16.0 7.2 Cathode 3.6 1.6 1.2 14.0 0.75 123 0.7 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 2.55 2.55 2.4 5 3 2 IF -- VF 100 7 5 3 IR -- VR 0C ty p Reverse Current, IR -- mA Forward Current, IF -- A Ct 10 7 5 3 2 1.0 7 5 3 2 0.1 0 0.2 0.4 2 10 7 5 3 2 1.0 7 5 3 2 0.1 Tj=15 yp 150 Tj= 25 C typ 125C typ 100C typ 75C ty p 0.6 0.8 1.0 1.2 1.4 IT11549 0 20 40 60 80 100 120 140 160 180 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 360 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 6 IT11550 PR(AV) -- VRM (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 (1) (3) (4) (2) 5 (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave VR 360 (1) (2) 4 Rectangular wave (3) 3 2 Sine wave VR 180 Sine wave 180 360 22 24 26 (4) 1 360 0 0 20 40 60 80 100 120 140 160 180 Average Forward Current, IO -- A IT11551 Peak Reverse Voltage, VRM -- V IT11552 No. A0525-2/3 SBR200-16JS 170 Tc -- IO Interterminal Capacitance, C -- pF 150 Case Temperature, Tc -- C (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave 360 7 5 C -- VR f=100kHz 3 2 130 110 90 100 7 5 70 Sine wave 50 180 30 0 360 5 10 3 2 1.0 (1) 15 (2) (4) 20 (3) 25 30 IT11553 2 3 5 7 10 2 3 5 Average Output Current, IO -- A 140 Transient Thermal Resistance, Rth(j-c) -- C / W IFSM -- t Reverse Voltage, VR -- V 10 7 5 3 2 7 100 IT11554 Rth(j-c) -- t Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave IS 20ms t 120 100 80 1.0 7 5 3 2 0.1 0.001 60 40 20 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.1 1.0 10 100 1000 10000 Time, t -- s ID01081 Time, t -- s IT06967 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0525-3/3 |
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